PART |
Description |
Maker |
NMA5109-A1M |
High Power Broadband Noise Sources 100 Hz to 500 MHz
|
Micronetics, Inc.
|
NMA5109-B1M |
High Power Broadband Noise Sources 100 Hz to 500 MHz
|
Micronetics, Inc.
|
NMA5108-A1M |
High Power Broadband Noise Sources 100 Hz to 300 MHz
|
Micronetics, Inc.
|
NMA5200-B1M |
High Power Broadband Noise Sources 100 Hz to 1000 MHz
|
Micronetics, Inc.
|
BFP193 Q62702-F1282 BFP193Q62702-F1282 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
NMA2516-2T |
High Power Broadband Noise Sources 7800 MHz to 8500 MHz
|
Micronetics, Inc.
|
Q62702-F1382 BFP183 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) NPN硅射频晶体管(对于低噪声,高增益2毫安0毫安的集电极电流宽带放大器) NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon Technologies AG
|
MAX3524 |
"Low-Noise, High-Linearity Broadband Amplifier"
|
Maxim
|
BFR181W Q62702-F1491 |
NPN Silicon RF Transistor )For low noise/ high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
|
BFP193W Q62702-F1577 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
|